• DocumentCode
    2231783
  • Title

    Extremely broad-gain quantum-cascade lasers based on dual-upper-state design

  • Author

    Fujita, Kazuue ; Furuta, Shinichi ; Dougakiuchi, Tatsuo ; Sugiyama, Atsushi ; Edamura, Tadataka ; Yamanishi, Masamichi

  • Author_Institution
    Central Res. Labs., Hamamatsu Photonics K.K., Hamamatsu, Japan
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Broad-gain quantum cascade lasers based on dual-upper-state design are reported. The devices exhibit a wide (-570 cm-1) electroluminescence spectra, a low cw threshold-current-density of 1.5 kA/cm2 and a high cw output-power of -200 mW at 300 K.
  • Keywords
    III-V semiconductors; current density; electroluminescence; gallium arsenide; indium compounds; optical design techniques; quantum cascade lasers; CW threshold-current-density; InGa0.53As0.47; broad-gain quantum-cascade lasers; dual-upper-state design; electroluminescence spectra; temperature 300 K; Cavity resonators; Laser transitions; Photonics; Quantum cascade lasers; Silicon; Temperature; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2231783