DocumentCode :
2231783
Title :
Extremely broad-gain quantum-cascade lasers based on dual-upper-state design
Author :
Fujita, Kazuue ; Furuta, Shinichi ; Dougakiuchi, Tatsuo ; Sugiyama, Atsushi ; Edamura, Tadataka ; Yamanishi, Masamichi
Author_Institution :
Central Res. Labs., Hamamatsu Photonics K.K., Hamamatsu, Japan
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
Broad-gain quantum cascade lasers based on dual-upper-state design are reported. The devices exhibit a wide (-570 cm-1) electroluminescence spectra, a low cw threshold-current-density of 1.5 kA/cm2 and a high cw output-power of -200 mW at 300 K.
Keywords :
III-V semiconductors; current density; electroluminescence; gallium arsenide; indium compounds; optical design techniques; quantum cascade lasers; CW threshold-current-density; InGa0.53As0.47; broad-gain quantum-cascade lasers; dual-upper-state design; electroluminescence spectra; temperature 300 K; Cavity resonators; Laser transitions; Photonics; Quantum cascade lasers; Silicon; Temperature; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950298
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2231783
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