• DocumentCode
    2231999
  • Title

    Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements

  • Author

    Schreurs, D. ; Vandenberghe, S. ; Carchon, G. ; Nauwelaers, B. ; Vandamme, E. ; Badenes, G. ; Deferm, L.

  • Author_Institution
    Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    429
  • Abstract
    Non-linear MOSFET models are mostly derived indirectly from DC, low-frequency C-V and/or high-frequency S-parameter measurements. We developed non-linear modelling techniques that determine the state functions of MOSFETs directly from high-frequency vectorial large-signal measurements and thus eliminate the small-signal detour. Two methods are proposed to determine these state functions: parameter optimisation and extraction. Both approaches yield accurate results. Hence, the main difference is the application range. The method of parameter optimisation quickly generates accurate non-linear models for particular applications, while the extraction method is preferred to determine general non-linear models
  • Keywords
    MOSFET; equivalent circuits; optimisation; parameter estimation; semiconductor device measurement; semiconductor device models; HF vectorial large-signal measurements; MOSFETs; high-frequency measurements; modelling techniques evaluation; nonlinear modelling techniques; parameter extraction; parameter optimisation; state function; Capacitance-voltage characteristics; MOSFETs; Microwave devices; Neural networks; Optimization methods; Parameter estimation; Scattering parameters; Stress; System-on-a-chip; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
  • Conference_Location
    Geneva
  • Print_ISBN
    0-7803-5482-6
  • Type

    conf

  • DOI
    10.1109/ISCAS.2000.856356
  • Filename
    856356