Title :
Vertical NV Memories an an Alternative to Scaling
Author_Institution :
Memory Strategies Int., Leander
Abstract :
The vertical dimension provides an alternative to lateral scaling of nanotechnology memories. Trends in vertical non-volatile devices are considered including stacked, trenched and FinFET memories along with multi-bit, multilayer and stacked wafer memories. Non-volatile memory types discussed include: MRAM, PC-RAM, FeRAM, PMC-RAM, SONOS, nanocrystal, organic FeRAM and metal oxide RAM.
Keywords :
multilayers; nanotechnology; random-access storage; FinFET memories; MRAM; PC-RAM; PMC-RAM; SONOS; metal oxide RAM; multibit memories; multilayer memories; nanocrystal RAM; nanotechnology memories; organic FeRAM; stacked memories; stacked wafer memories; trenched memories; vertical NV memories; vertical non-volatile devices; Character generation; Diodes; Ferroelectric films; FinFETs; Nanotechnology; Nonvolatile memory; Random access memory; SONOS devices; Silicon; Thin film transistors;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-1361-4
DOI :
10.1109/NVMT.2007.4389935
