DocumentCode :
2232310
Title :
Design of a 1 Gb Radiation Hardened NAND flash memory
Author :
Gupta, Nikhil ; Vermeire, B. ; Barnaby, Hugh ; Goksel, M. ; Li, Edward ; Czajkowski, David
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fYear :
2007
fDate :
10-13 Nov. 2007
Firstpage :
10
Lastpage :
14
Abstract :
Non-volatile memories used in the space environment typically require radiation hardened process technologies. These technologies are not only costly, but the resultant die occupies more area compared to commercial memories of comparable size. This in turn limits the memory density of these radiation hardened memories. In this paper, we present a technique for the development of a low cost 1 Gb radiation hardened (Rad Hard) NAND flash memory manufactured with commercial components. The design methodology provides an alternate strategy for producing radiation hardened memory while simultaneously achieving higher cell densities at lower costs.
Keywords :
NAND circuits; flash memories; radiation hardening (electronics); random-access storage; NAND flash memory; memory density; nonvolatile memories; radiation hardened memory; radiation hardened process technologies; storage capacity 1 Gbit; Application specific integrated circuits; CMOS technology; Costs; Flash memory; Nonvolatile memory; Radiation effects; Radiation hardening; Silicon on insulator technology; Single event upset; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-1361-4
Type :
conf
DOI :
10.1109/NVMT.2007.4389936
Filename :
4389936
Link To Document :
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