DocumentCode
2232310
Title
Design of a 1 Gb Radiation Hardened NAND flash memory
Author
Gupta, Nikhil ; Vermeire, B. ; Barnaby, Hugh ; Goksel, M. ; Li, Edward ; Czajkowski, David
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fYear
2007
fDate
10-13 Nov. 2007
Firstpage
10
Lastpage
14
Abstract
Non-volatile memories used in the space environment typically require radiation hardened process technologies. These technologies are not only costly, but the resultant die occupies more area compared to commercial memories of comparable size. This in turn limits the memory density of these radiation hardened memories. In this paper, we present a technique for the development of a low cost 1 Gb radiation hardened (Rad Hard) NAND flash memory manufactured with commercial components. The design methodology provides an alternate strategy for producing radiation hardened memory while simultaneously achieving higher cell densities at lower costs.
Keywords
NAND circuits; flash memories; radiation hardening (electronics); random-access storage; NAND flash memory; memory density; nonvolatile memories; radiation hardened memory; radiation hardened process technologies; storage capacity 1 Gbit; Application specific integrated circuits; CMOS technology; Costs; Flash memory; Nonvolatile memory; Radiation effects; Radiation hardening; Silicon on insulator technology; Single event upset; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
Conference_Location
Albuquerque, NM
Print_ISBN
978-1-4244-1361-4
Type
conf
DOI
10.1109/NVMT.2007.4389936
Filename
4389936
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