• DocumentCode
    2232310
  • Title

    Design of a 1 Gb Radiation Hardened NAND flash memory

  • Author

    Gupta, Nikhil ; Vermeire, B. ; Barnaby, Hugh ; Goksel, M. ; Li, Edward ; Czajkowski, David

  • Author_Institution
    Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
  • fYear
    2007
  • fDate
    10-13 Nov. 2007
  • Firstpage
    10
  • Lastpage
    14
  • Abstract
    Non-volatile memories used in the space environment typically require radiation hardened process technologies. These technologies are not only costly, but the resultant die occupies more area compared to commercial memories of comparable size. This in turn limits the memory density of these radiation hardened memories. In this paper, we present a technique for the development of a low cost 1 Gb radiation hardened (Rad Hard) NAND flash memory manufactured with commercial components. The design methodology provides an alternate strategy for producing radiation hardened memory while simultaneously achieving higher cell densities at lower costs.
  • Keywords
    NAND circuits; flash memories; radiation hardening (electronics); random-access storage; NAND flash memory; memory density; nonvolatile memories; radiation hardened memory; radiation hardened process technologies; storage capacity 1 Gbit; Application specific integrated circuits; CMOS technology; Costs; Flash memory; Nonvolatile memory; Radiation effects; Radiation hardening; Silicon on insulator technology; Single event upset; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    978-1-4244-1361-4
  • Type

    conf

  • DOI
    10.1109/NVMT.2007.4389936
  • Filename
    4389936