Title :
Stable and near-omni-directional high-efficiency amorphous Si photovoltaic devices
Author :
Hsu, Chih-Wei ; Shieh, Jia-Min ; Shen, Chang-Hong ; Huang, Jung Y. ; Kuo, Hao-Chung ; Dai, Bau-Tong ; Lee, Ching-Ting ; Pan, Ci-Ling ; Yang, Fu-Liang
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsmchu, Taiwan
Abstract :
Highly stable high-density plasma-fabricated amorphous Si solar cells (7-9%) exhibit ultra-low photo-induced degradation in conversion-efficiency by 5.7%. This photovoltaic device with low-defect absorption layer is also a near-omni-directional solar-electricity generator.
Keywords :
absorption; amorphous semiconductors; elemental semiconductors; silicon; solar cells; Si; conversion efficiency; efficiency 5.7 percent; high-efficiency amorphous Si photovoltaic devices; low-defect absorption layer; near-omnidirectional photovoltaic devices; near-omnidirectional solar-electricity generator; stable high-density plasma-fabricated amorphous solar cells; ultralow photoinduced degradation; Iterative closest point algorithm; Photovoltaic cells; Photovoltaic systems; Plasma temperature; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
