Title :
60 GHz Amplifier Employing Slow-wave Transmission Lines in 65-nm CMOS
Author :
Sandström, Dan ; Varonen, Mikko ; Kärkkäinen, Mikko ; Halonen, Kari
Author_Institution :
SMARAD-2/Electron. Circuit Design Lab., TKK Helsinki Univ. of Technol., Helsinki, Finland
Abstract :
A three-stage V-band amplifier implemented in 65-nm baseline CMOS technology is presented in this paper. Slow-wave coplanar waveguides are used for matching and interconnects to study the benefits of using this line type in amplifier design. Measured power gain, noise figure and 1 dB output compression point at 60 GHz are 13 dB, 6.3 dB and +4 dBm, respectively. The amplifier has 19.6 GHz of 3 dB bandwidth, thus covering entirely the unlicenced band around 60-GHz. The performance is achieved with a 1.2 V supply and 45 mA DC-current consumption.
Keywords :
CMOS analogue integrated circuits; coplanar waveguides; millimetre wave amplifiers; transmission lines; CMOS technology; DC-current consumption; amplifier design; frequency 19.6 GHz; frequency 60 GHz; noise figure 13 dB; noise figure 6.3 dB; size 65 nm; slow-wave coplanar waveguides; slow-wave transmission lines; CMOS technology; Coplanar transmission lines; Coplanar waveguides; Gain measurement; Noise figure; Noise measurement; Power measurement; Power transmission lines; Transmission line measurements; Transmission lines;
Conference_Titel :
NORCHIP, 2008.
Conference_Location :
Tallinn
Print_ISBN :
978-1-4244-2492-4
Electronic_ISBN :
978-1-4244-2493-1
DOI :
10.1109/NORCHP.2008.4738275
