Title :
High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)
Author :
Nguyen, H.P.T. ; Zhang, S. ; Cui, K. ; Han, X. ; Mi, Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; nanowires; semiconductor quantum wires; silicon; InGaN-GaN; Si; dot-in-a-wire heterostructures; internal quantum efficiency; light emitting diodes; molecular beam epitaxial growth; nanowire LED; Current measurement; Gallium nitride; Light emitting diodes; Nanoscale devices; Quantum dots; Temperature; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
