DocumentCode :
2232438
Title :
Roles of Oxygen in Crystalline GST and at the GST/TiAlN Interface
Author :
Edwards, A.H. ; Pineda, A.C. ; Schultz, Peter A.
Author_Institution :
Air Force Res. Lab., Aberdeen
fYear :
2007
fDate :
10-13 Nov. 2007
Firstpage :
40
Lastpage :
44
Abstract :
We present a first principles study of oxygen in crystalline Ge2Sb2Te4 and at the Ge2Sb2Te4/TiAlN interface. We find that oxygen molecules dissolve and dissociate exothermically into all of the crystalline forms of GST. Furthermore, we find that interstitial oxygen atoms are strongly attracted to the crystalline GST/TiAIN interface, where they bond preferentially between germanium and aluminum atoms. We have calculated energies of adhesion and we predict that single oxygen atoms increase significantly the adhesion of the GST film to the the metal.
Keywords :
adhesion; germanium alloys; interface structure; interstitials; oxygen; titanium alloys; GST/TiAIN interface; Ge2Sb2Te4-TiAlN; O; adhesion; aluminum atoms; crystalline GST; germanium antimony tellurium alloys; germanium atoms; interstitial oxygen atoms; oxygen molecules; Adhesives; Bonding; Crystalline materials; Crystallization; Laboratories; Linear discriminant analysis; Nonvolatile memory; Optical films; Oxygen; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-1361-4
Type :
conf
DOI :
10.1109/NVMT.2007.4389942
Filename :
4389942
Link To Document :
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