A 90nm CMOS UWB LNA

Author

Axholt, Andreas ; Ahmad, Waqas ; Sjöland, Henrik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

fYear

2008

fDate

16-17 Nov. 2008

Firstpage

25

Lastpage

28

Abstract

A single-ended two=stage 3.1-10.6 GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90 nm CMOS process and measures just 0.31Ã—0.41 mm² including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25Â±1.25 dB, a noise figure of 4.1=9.4 dB, and an input reflection S₁₁ better than -12 dB between 3.1 GHz and 10.6 GHz, while consuming 8.6 mA from a 1V supply.

Keywords

CMOS integrated circuits; low noise amplifiers; ultra wideband communication; CMOS UWB low noise amplifier; RF probe; common source stage; current 8.6 mA; frequency 3.1 GHz to 10.6 GHz; pad; resistive shunt feedback; size 90 nm; ultra wide band communication; voltage 1 V; wideband input match; Broadband amplifiers; CMOS process; Feedback; Frequency; Gain measurement; Impedance matching; Low-noise amplifiers; Semiconductor device measurement; Topology; Ultra wideband communication;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2008.

Conference_Location

Tallinn

Print_ISBN

978-1-4244-2492-4

Electronic_ISBN

978-1-4244-2493-1

Type

conf

DOI

10.1109/NORCHP.2008.4738276

Filename

4738276