Title :
Acousto-Ferroelectric RAM -New Type of Nonvolatile Memory Device
Author_Institution :
Academgorodoc, Novosibirsk
Abstract :
In this paper, a new paradigm for the operation principle of a ferroelectric random access memory (FeRAM) is presented. The new type of FeRAM is based on piezo-acoustic phenomena in ferroelectric films. It is called acousto-ferroelectric RAM (AFeRAM) because its operation is based on the acoustic method for detecting intrinsic remanent polarization of a ferroelectric memory cell. It has been shown that the novel memory cell concept is highly scalable, so that the structural effective memory cell size can be scaled down to IF2. The advantages of the AFeRAM element are outlined in the text.
Keywords :
ferroelectric storage; random-access storage; acousto ferroelectric RAM; ferroelectric films; nonvolatile memory device; piezo acoustic phenomena; Acoustic signal detection; Acoustic waves; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Piezoelectric effect; Polarization; Random access memory; Read-write memory; Voltage;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-1361-4
DOI :
10.1109/NVMT.2007.4389945
