• DocumentCode
    2232486
  • Title

    Acousto-Ferroelectric RAM -New Type of Nonvolatile Memory Device

  • Author

    Krieger, Ju H.

  • Author_Institution
    Academgorodoc, Novosibirsk
  • fYear
    2007
  • fDate
    10-13 Nov. 2007
  • Firstpage
    53
  • Lastpage
    55
  • Abstract
    In this paper, a new paradigm for the operation principle of a ferroelectric random access memory (FeRAM) is presented. The new type of FeRAM is based on piezo-acoustic phenomena in ferroelectric films. It is called acousto-ferroelectric RAM (AFeRAM) because its operation is based on the acoustic method for detecting intrinsic remanent polarization of a ferroelectric memory cell. It has been shown that the novel memory cell concept is highly scalable, so that the structural effective memory cell size can be scaled down to IF2. The advantages of the AFeRAM element are outlined in the text.
  • Keywords
    ferroelectric storage; random-access storage; acousto ferroelectric RAM; ferroelectric films; nonvolatile memory device; piezo acoustic phenomena; Acoustic signal detection; Acoustic waves; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Piezoelectric effect; Polarization; Random access memory; Read-write memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    978-1-4244-1361-4
  • Type

    conf

  • DOI
    10.1109/NVMT.2007.4389945
  • Filename
    4389945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2232486