A high-rel embedded ferroelectric memory

Author

Kamp, D.A. ; DeVilbiss, Alan D.

Author_Institution

Celis Semicond. Corp., Colorado Springs

fYear

2007

fDate

10-13 Nov. 2007

Firstpage

56

Lastpage

59

Abstract

An 8 Kbit ferroelectric nonvolatile memory (FeRAM) has been designed and fabricated for embedded memory applications requiring high reliability operation such as space and radio frequency identification (RFID). It features a wide operating supply range of 2.7-3.6 V, operating temperature range of -60°C to +125°C, and robust memory cell data protection. The memory write and read cycle time is programmable to as short as 90 ns with an access time of 60 ns. Typical power consumption per cycle is 7.6 mW. Energy consumption per cycle is 0.94 nJ. The silicon area used is 0.28 mm² for 0.35 μm design rules.

Keywords

embedded systems; ferroelectric storage; integrated circuit design; integrated circuit reliability; random-access storage; secure storage; FeRAM; RFID; energy 0.94 J; energy consumption; ferroelectric nonvolatile memory design; high-rel embedded ferroelectric memory applications; memory cell data protection; memory write-and-read cycle time; power 7.6 mW; power consumption; radio frequency identification; reliability operation; silicon area; size 0.35 mum; temperature -60 C to 125 C; voltage 2.7 V to 3.6 V; Energy consumption; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Protection; Radiofrequency identification; Random access memory; Read-write memory; Robustness; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2007. NVMTS '07

Conference_Location

Albuquerque, NM

Print_ISBN

978-1-4244-1361-4

Type

conf

DOI

10.1109/NVMT.2007.4389946

Filename

4389946