Title :
Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process
Author :
Rodriguez, John ; Remack, K. ; Gertas, J. ; Boku, K. ; Udayakumar, K.R. ; Summerfelt, Scott ; Shinn, Gregory ; Madan, Sudhir ; McAdams, Hugh ; Moise, T. ; Eliason, J. ; Bailey, Richard ; Depner, M. ; Kim, Daesig ; Staubs, Phil
Author_Institution :
Texas Instrum. Inc., Dallas, TX
Abstract :
Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4×1012 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake to 1,000 Hrs with no fails.
Keywords :
CMOS memory circuits; ferroelectric storage; random-access storage; FRAM reliability; ferroelectric random access memory; intrinsic endurance test; size 130 nm; standard 130 nm CMOS process; storage capacity 4 Mbit; temperature 125 degC; temperature 85 degC; time 10 year; time 1000 hour; CMOS process; Ferroelectric films; Ferroelectric materials; Instruments; Nonvolatile memory; Packaging; Polarization; Random access memory; Temperature; Testing;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2007. NVMTS '07
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-1361-4
DOI :
10.1109/NVMT.2007.4389948
