Title :
Enhanced terahertz pulses emission from inas surface by femtosecond laser pulses with tilted intensity front
Author :
Avetisyan, Yu. ; Khachatryan, K. ; Beigang, R.
Author_Institution :
Dept. of Microwave Eng., Yerevan State Univ., Yerevan
Abstract :
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the direction of terahertz emission from InAs surface and by that way achieving significant increase in the generated power.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; submillimetre wave generation; InAs; InAs surface; femtosecond laser pulses; semiconductor surfaces; terahertz pulse emission; tilted intensity front; Laser beams; Optical beams; Optical pulse generation; Optical pulses; Optical surface waves; Photoconducting materials; Power generation; Semiconductor lasers; Surface emitting lasers; Ultrafast optics; (260.3090) Infrared, far; (320.7080) Ultrafast devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
