DocumentCode
2232945
Title
Enhanced terahertz pulses emission from inas surface by femtosecond laser pulses with tilted intensity front
Author
Avetisyan, Yu. ; Khachatryan, K. ; Beigang, R.
Author_Institution
Dept. of Microwave Eng., Yerevan State Univ., Yerevan
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the direction of terahertz emission from InAs surface and by that way achieving significant increase in the generated power.
Keywords
III-V semiconductors; high-speed optical techniques; indium compounds; submillimetre wave generation; InAs; InAs surface; femtosecond laser pulses; semiconductor surfaces; terahertz pulse emission; tilted intensity front; Laser beams; Optical beams; Optical pulse generation; Optical pulses; Optical surface waves; Photoconducting materials; Power generation; Semiconductor lasers; Surface emitting lasers; Ultrafast optics; (260.3090) Infrared, far; (320.7080) Ultrafast devices;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571323
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