Title :
Effect of Y-doping on the piezoelectric properties of (1-x)BiScO3-xPbTiO3 high-temperature piezoelectric ceramics
Author :
Li, Qishou ; Shi, Wei ; Jiang, Yuzhi ; Pei, Ying ; Chen, Qiang ; Yue, Xi ; Xiao, Dingquan ; Zhu, Jianguo
Author_Institution :
Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China
Abstract :
(1-x)Bi(Sc1-yYy)O3-xPbTiO3 (BSYPTx/y) ceramics were prepared by the conventional mixed oxide method. It was found that the morphotropic phase boundary (MPB) between rhombohedral and tetragonal phase of BSYPTx/y system was moved to the lower PT content with increasing of BiYO3 content. The Curie temperature (TC) near MPB of BSYPTx/y ceramics was found to increase with increasing of BiYO3 content. However, the piezoelectric properties (d33 and kp) decreased with increasing of BiYO3 content. BSYPTx/y ceramics with x = 0.56, y = 0.2 showed a high TC of 490degC and a large d33 of 147 pC/N.
Keywords :
bismuth compounds; dielectric losses; dielectric relaxation; doping profiles; ferroelectric Curie temperature; high-temperature effects; lead compounds; permittivity; piezoelectricity; Bi(Sc1-yYy)O3-PbTiO3; Curie temperature; conventional mixed oxide method; dielectric constant; dielectric loss; dielectric relaxation; doping effect; ferroelectric property; high-temperature piezoelectric ceramic preparation; morphotropic phase boundary; piezoelectric property; temperature 490 C; Acoustic measurements; Aerospace industry; Ceramics; Dielectric measurements; Materials science and technology; Physics; Piezoelectric materials; Powders; Temperature dependence; Temperature sensors; BSPT; high-curie temperature; piezoelectric;
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2009.5307539
