A Gummel-Poon model for single and double heterojunction bipolar transistors

Author

Huang, C.N. ; Abdel-Motaleb, Ibrahim M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

254

Lastpage

257

Abstract

An analytical model for single- and double-heterojunction bipolar transistors developed by using the concepts of the Gummel-Poon model is discussed. The equations for injected minority carrier concentrations are developed using thermionic diffusion theory. Linking current and total charges in the base are calculated. The early voltages are treated as a function of the applied voltage rather than as a constant. The tunneling effect is considered for abrupt heterojunctions. The resemblance of this model to the SPICE bipolar junctions transistor (BJT) model makes it easy to implement in SPICE

Keywords

heterojunction bipolar transistors; minority carriers; semiconductor device models; tunnelling; Gummel-Poon model; SPICE; abrupt heterojunctions; double-heterojunction; early voltages; heterojunction bipolar transistors; injected minority carrier concentrations; linking current; thermionic diffusion theory; total charges; tunneling effect; Analytical models; Double heterojunction bipolar transistors; Electron emission; Equations; Heterojunction bipolar transistors; Joining processes; SPICE; Space charge; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69503

Filename

69503