Title :
A Gummel-Poon model for single and double heterojunction bipolar transistors
Author :
Huang, C.N. ; Abdel-Motaleb, Ibrahim M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
An analytical model for single- and double-heterojunction bipolar transistors developed by using the concepts of the Gummel-Poon model is discussed. The equations for injected minority carrier concentrations are developed using thermionic diffusion theory. Linking current and total charges in the base are calculated. The early voltages are treated as a function of the applied voltage rather than as a constant. The tunneling effect is considered for abrupt heterojunctions. The resemblance of this model to the SPICE bipolar junctions transistor (BJT) model makes it easy to implement in SPICE
Keywords :
heterojunction bipolar transistors; minority carriers; semiconductor device models; tunnelling; Gummel-Poon model; SPICE; abrupt heterojunctions; double-heterojunction; early voltages; heterojunction bipolar transistors; injected minority carrier concentrations; linking current; thermionic diffusion theory; total charges; tunneling effect; Analytical models; Double heterojunction bipolar transistors; Electron emission; Equations; Heterojunction bipolar transistors; Joining processes; SPICE; Space charge; Tunneling; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69503
