Title :
A new 4-phase charge pump without body effects for low supply voltages
Author :
Lin, Hongchin ; Lu, JainHao ; Lin, Yen-Tai
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Abstract :
A new four-phase charge pumping circuit for low supply voltages using 0.6 μm triple-well CMOS technology to generate high negative boosted voltages is presented. With the new substrate connected technique, the influence of threshold voltage (-0.94 V) is minimized and the body effect is almost eliminated. A five-stage charge pump can efficiently pump lower than -7 V at supply voltage of 1.8 V with 100 μA loading current.
Keywords :
CMOS memory circuits; flash memories; low-power electronics; -0.94 V; 0.6 micron; 1.8 V; 100 muA; five-stage charge pump; four-phase charge pump; loading current; low supply voltages; memory circuits; negative boosted voltages; substrate connected technique; threshold voltage; triple-well CMOS technology; CMOS technology; Charge pumps; Circuits; Clocks; Degradation; Diodes; Flash memory; Low voltage; MOSFETs; Threshold voltage;
Conference_Titel :
ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-7363-4
DOI :
10.1109/APASIC.2002.1031530
