Approximate process-parameter dependent symbolic calculation of harmonic distortion in log-domain: the lossy integrator case-study

Author

Drakakis, E.M. ; Payne, A.J.

Author_Institution

Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

2

fYear

2000

fDate

2000

Firstpage

609

Abstract

This paper attempts to estimate in an approximate way the impact of the basic bipolar process parameters upon harmonic distortion for the log-domain lossy integrator case. A symbolic transistor-level calculation is elaborated, based on the Charge-Control-Model (CCM) for the Bipolar Junction Transistor (BJT). Results correlating the BJT finite beta and parasitic base and emitter resistance with the harmonic distortion level present at the output are provided

Keywords

bipolar analogue integrated circuits; harmonic distortion; integrating circuits; symbol manipulation; BJT finite beta; BJT parasitic base resistance; BJT parasitic emitter resistance; approximate method; bipolar junction transistor; bipolar process parameters; charge control model; harmonic distortion; log-domain lossy integrator; process-parameter dependent symbolic calculation; symbolic transistor-level calculation; Circuit synthesis; Circuit topology; Educational institutions; Electronic switching systems; Harmonic distortion; Nonlinear filters; Power supplies; Resistors; Steady-state; Transconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.856402

Filename

856402