Preparation of K3Li2Nb5O15 thin films

Author

Adachi, Masatoshi ; Aoyama, Y. ; Karaki, Tomoaki ; Yang, Lihui ; Wang, Genshui ; Dong, Xianlin

Author_Institution

Dept. of Intell. Syst. Design Eng., Toyama Prefectural Univ., Imizu, Japan

fYear

2009

fDate

23-27 Aug. 2009

Firstpage

1

Lastpage

3

Abstract

The c-axis oriented K₃Li₂Nb₅O₁₅ (KLN) tungsten-bronze thin films have been grown on LaNiO₃/Si substrates substrates by RF planar magnetron sputtering. The target used in this study is prepared by sintering pressed powder with potassium and lithium enriched composition, 33 mole% K₂CO₃ 22mole% Li₂CO₃ and 45 mole% Nb₂O₅. The optimum sputtering conditions for growing tungsten-bronze structure films are an Ar atmosphere, 1.5Pa, 100 W RF power and 400degC substrate temperature. Dielectric properties of KLN films are as follows: Curie temperature of 465degC and the dielectric constant of 91 at room temperature.

Keywords

ferroelectric Curie temperature; ferroelectric materials; ferroelectric thin films; lithium compounds; permittivity; potassium compounds; sintering; sputter deposition; Curie temperature; K₃Li₂Nb₅O₁₅; LaNiO₃-Si; RF planar magnetron sputtering; dielectric constant; film structure; power 100 W; sintering; temperature 293 K to 298 K; temperature 400 C; thin film preparation; tungsten-bronze thin films; Argon; Atmosphere; Dielectric substrates; Lithium; Niobium; Powders; Radio frequency; Semiconductor thin films; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the

Conference_Location

Xian

ISSN

1099-4734

Print_ISBN

978-1-4244-4970-5

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2009.5307544

Filename

5307544