Title :
Preparation of K3Li2Nb5O15 thin films
Author :
Adachi, Masatoshi ; Aoyama, Y. ; Karaki, Tomoaki ; Yang, Lihui ; Wang, Genshui ; Dong, Xianlin
Author_Institution :
Dept. of Intell. Syst. Design Eng., Toyama Prefectural Univ., Imizu, Japan
Abstract :
The c-axis oriented K3Li2Nb5O15 (KLN) tungsten-bronze thin films have been grown on LaNiO3/Si substrates substrates by RF planar magnetron sputtering. The target used in this study is prepared by sintering pressed powder with potassium and lithium enriched composition, 33 mole% K2CO3 22mole% Li2CO3 and 45 mole% Nb2O5. The optimum sputtering conditions for growing tungsten-bronze structure films are an Ar atmosphere, 1.5Pa, 100 W RF power and 400degC substrate temperature. Dielectric properties of KLN films are as follows: Curie temperature of 465degC and the dielectric constant of 91 at room temperature.
Keywords :
ferroelectric Curie temperature; ferroelectric materials; ferroelectric thin films; lithium compounds; permittivity; potassium compounds; sintering; sputter deposition; Curie temperature; K3Li2Nb5O15; LaNiO3-Si; RF planar magnetron sputtering; dielectric constant; film structure; power 100 W; sintering; temperature 293 K to 298 K; temperature 400 C; thin film preparation; tungsten-bronze thin films; Argon; Atmosphere; Dielectric substrates; Lithium; Niobium; Powders; Radio frequency; Semiconductor thin films; Sputtering; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2009.5307544
