DocumentCode
2233353
Title
A large signal DC model for GaAs/Ga1-xAlxAs heterojunction bipolar transistors
Author
Grossman, P. Chris ; Oki, A.
Author_Institution
TRW, Redondo Beach, CA, USA
fYear
1989
fDate
18-19 Sep 1989
Firstpage
258
Lastpage
261
Abstract
An empirical large-signal DC model with temperature dependence that accurately characterizes heterojunction bipolar transistor (HBT) performance over eight decades of current is discussed. Simple methods for extracting the model parameters from measurements are included. When the transistor is simulated wit these parameters and an appropriate thermal circuit is used, the characteristic I -V curves for the device, showing self-heating effects, can be reproduced
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAs-GaAlAs; characteristic I-V curves; heterojunction bipolar transistors; large signal DC model; model parameters; self-heating effects; temperature dependence; thermal circuit; Bipolar transistors; Circuit simulation; Circuit testing; Current density; Gallium arsenide; Heating; Heterojunction bipolar transistors; Integrated circuit modeling; Molecular beam epitaxial growth; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1989.69504
Filename
69504
Link To Document