Title :
Terahertz-field-induced carrier-wave Rabi oscillations in n-type GaAs
Author :
Gaal, P. ; Kuehn, W. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hey, R.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin
Abstract :
Carrier-wave Rabi oscillations between bound impurity levels in n-type GaAs are demonstrated by ultrafast THz propagation experiments for driving fields up to 5 kV/cm. For stronger fields the two-level approach breaks down.
Keywords :
III-V semiconductors; gallium arsenide; nonlinear optics; optical materials; GaAs; carrier-wave Rabi oscillations; n-type GaAs; ultrafast THz propagation; Electromagnetic coupling; Frequency; Gallium arsenide; Infrared spectra; Neodymium; Nonlinear optics; Optical scattering; Pulse measurements; Stimulated emission; Ultrafast optics; (190.5970) Semiconductor nonlinear optics including MQW; (300.6270) Spectroscopy, far infrared;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
