DocumentCode
2233475
Title
Nonlinear THz-pump/THz-probe measurements of semiconductor carrier dynamics
Author
Lindenberg, A.M. ; Wen, H. ; Szilagyi, E.
Author_Institution
PULSE Center, Stanford Linear Accel. Center, Menlo Park, CA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
A table-top THz source has been employed to study the nonlinear response of semiconductors to near-half-cycle femtosecond pulses. We report nonlinear field-induced changes in the far infrared absorption coefficient, associated with impact ionization processes.
Keywords
absorption coefficients; high-speed optical techniques; impact ionisation; nonlinear optics; submillimetre waves; THz-probe measurement; THz-pump measurement; far infrared absorption coefficient; impact ionization; semiconductor carrier dynamics; Charge carrier density; Electromagnetic wave absorption; Gallium arsenide; Impact ionization; Nonlinear optics; Optical pulses; Pulse generation; Pulse measurements; Temperature; Ultrafast optics; (190.7110) ultrafast nonlinear optics; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571346
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