Title :
Optical detection of THz-induced strong field effects in ensembles of neutral donors
Author :
Allen, Dan G. ; Kim, Sangwoo ; Sherwin, Mark S.
Author_Institution :
Dept. of Phys., Univ. of California Santa Barbara, Santa Barbara, CA
Abstract :
Narrowband THz radiation drives transitions between bound electron states in GaAs neutral donors. Elastic light scattering from a donor bound exciton resonance allows time-resolved measurements of the excited state lifetime and THz-induced AC Stark effect.
Keywords :
III-V semiconductors; Stark effect; excitons; gallium arsenide; light scattering; submillimetre wave detectors; surface states; GaAs; GaAs neutral donors; THz-induced AC Stark effect; THz-induced strong field effects; bound electron states; donor bound exciton resonance; elastic light scattering; excited state lifetime; Electron optics; Gallium arsenide; Light scattering; Optical detectors; Optical pulses; Optical scattering; Optical sensors; Pulse measurements; Resonance light scattering; Time measurement; (140.2600) Free Electron Lasers; (300.6470) Spectroscopy, semiconductors; (300.6500) Spectroscopy, time resolved;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
