• DocumentCode
    2233570
  • Title

    Development of an evaluation model for the design of fault-tolerant solid state mass memory

  • Author

    Cardarilli, G.C. ; Marinucci, P. ; Salsano, A.

  • Author_Institution
    Dept. of Electron. Eng., Rome Univ., Italy
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    673
  • Abstract
    The use of Commercial Off The Shelf (COTS) devices for space applications is growing due the higher cost and lower performance of corresponding dedicated devices. The needed reliability is achieved at the architectural level. This paper faces this problem in the design of a Solid State Mass Memory (SSMM). High-energy particles induce soft and hard errors in DRAMs devices. In our approach, these errors are mitigated at system level rather than at device level. In particular our SSMM is based on a suitable Error Control Code (ECC) and on memory redundancy in order to improve the tolerance with respect to DRAM induced errors. Accurate space environment models and decisional models are important to optimize the SSMM overhead, the amount of radiation shielding, the overall mass, and could suggest, if possible, the selection of a better orbit with a more benign environment. In this paper we describe the methodology used to select the parameter design for a class of memory architectures
  • Keywords
    DRAM chips; error correction codes; fault tolerant computing; memory architecture; radiation effects; redundancy; space vehicle electronics; COTS device; DRAM; decision model; design; error control code; evaluation model; fault tolerant architecture; particle irradiation; redundancy; reliability; solid-state mass memory; space environment; Circuit faults; Error correction; Error correction codes; Fault tolerance; Memory architecture; Random access memory; Redundancy; Satellites; Solid modeling; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
  • Conference_Location
    Geneva
  • Print_ISBN
    0-7803-5482-6
  • Type

    conf

  • DOI
    10.1109/ISCAS.2000.856418
  • Filename
    856418