Title :
Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process
Author :
Ker, Ming-Dou ; Chang, Chyh-Yih ; Jiang, Hsin-Chin
Author_Institution :
Integrated Circuits & Syst. Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25 μm CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25 μm CMOS process with grounded p-type substrate.
Keywords :
CMOS analogue integrated circuits; VLSI; integrated circuit design; low-power electronics; 0.25 micron; CMOS; Si; grounded p-type substrate; low-voltage operation; negative charge pump circuit; stable negative voltage generation; substrate-isolated polysilicon diode; voltage waveforms; CMOS integrated circuits; CMOS process; CMOS technology; Charge pumps; Diodes; Doping; Integrated circuit technology; Isolation technology; P-n junctions; Voltage;
Conference_Titel :
ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-7363-4
DOI :
10.1109/APASIC.2002.1031553
