Title : 
Dielectric properties of rutile (Zn1/3B2/3)x(TiySn1-y)1-xO2 (B=Nb5+,Ta5+) at microwave frequency
         
        
            Author : 
Seo, Seock No ; Kim, Eung Soo
         
        
            Author_Institution : 
Dept. of Mater. Eng., Kyonggi Univ., Suwon, South Korea
         
        
        
        
        
        
            Abstract : 
The microwave dielectric properties of rutile (Zn1/3B2/3) x(TiySn1-y)1-xO2 (B=Nb5+,Ta5+, 0.05 les x les 0.35, y=0.2, 0.8) were investigated with structural characteristics. A single phase with tetragonal rutile (P42/mnm, No.136, Z=2) structure was obtained through the entire range of compositions. With an increase of (Zn1/3B2/3)O2 content, the dielectric constant (K) of sintered specimens with (Ti0.2Sn0.8)O2 increased, while that of the specimens with (Ti0.8Sn0.2)O2 decreased. The temperature coefficient of resonant frequency (TCF) of sintered specimens was dependent on oxygen octahedral distortion and/or cations bond valence of rutile structure. Quality factor (Qf) was dependent on (Zn1/3B2/3)O2 content, and the specimens with (Ti0.2Sn0.8)O2 showed larger Qf value than that with (Ti0.8Sn0.2)O2 for the same content of (Zn1/3B2/3)O2.
         
        
            Keywords : 
crystal structure; dielectric materials; microwave materials; niobium compounds; permittivity; tantalum compounds; zinc compounds; (Zn0.33Nb0.67)x(TiySn1-y)1-xO2; (Zn0.33Ta0.67)x(TiySn1-y)1-xO2; crystal structure; dielectric constant; microwave dielectric properties; oxygen octahedral distortion; quality factor; resonant frequency; structural characteristics; temperature coefficient; tetragonal rutile phase; Bonding; Crystalline materials; Dielectric materials; Dielectric measurements; Electromagnetic heating; Microwave devices; Microwave frequencies; Powders; X-ray scattering; Zinc;
         
        
        
        
            Conference_Titel : 
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
         
        
            Conference_Location : 
Xian
         
        
        
            Print_ISBN : 
978-1-4244-4970-5
         
        
            Electronic_ISBN : 
1099-4734
         
        
        
            DOI : 
10.1109/ISAF.2009.5307563