A 2.5-GS/s 30-mW 4-bit Flash ADC in 90nm CMOS

Author

Sundström, Timmy ; Alvandpour, Atila

Author_Institution

Dept. of Electr. Eng., Linkoping Univ., Linkoping, Sweden

fYear

2008

fDate

16-17 Nov. 2008

Firstpage

264

Lastpage

267

Abstract

A 2.5 GS/s flash ADC, fabricated in 90 nm CMOS, avoids traditional power, speed and accuracy trade-offs by using comparator redundancy with power-gating capabilities. Redundancy removes the need to control comparator offsets, allowing the large process-variation induced mismatch of small devices in nanometer technologies. This enables the use of small-sized, ultra-low-power comparators. Measurement results show that the ADC dissipates 30 mW at 1.2 V. With 63 gate-able comparators, the ADC achieves 4.0 effective number of bits.

Keywords

CMOS integrated circuits; analogue-digital conversion; comparators (circuits); 4-bit flash ADC; CMOS; comparator redundancy; nanometer technologies; power 30 mW; power-gating capabilities; process-variation; size 90 nm; voltage 1.2 V; CMOS analog integrated circuits; CMOS process; CMOS technology; Calibration; Clocks; Integrated circuit measurements; Integrated circuit technology; Nanoscale devices; Power dissipation; Signal resolution; Analog-digital conversion; CMOS analog integrated circuits; high-speed electronics; power demand;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2008.

Conference_Location

Tallinn

Print_ISBN

978-1-4244-2492-4

Electronic_ISBN

978-1-4244-2493-1

Type

conf

DOI

10.1109/NORCHP.2008.4738324

Filename

4738324