Nitride /organic hybrid heterostructures for photodetector devices

Author

Hyunjin Kim ; Qiang Zhang ; Nurmikko, Arto ; Qian Sun ; Jung Han

Author_Institution

Div. of Eng. & Dept. of Phys., Brown Univ., Providence, RI

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We report on the study of incorporation of organic thin film semiconductors with GaN to explore new types of photodetector or solar cell application. Photovoltaic effect and photoconductivity gain have been demonstrated using GaN/CuPc and GaN/alpha -NPD hybrid device structure, which offer new opportunities in design of versatile optoelectronic devices.

Keywords

III-V semiconductors; gallium compounds; optical design techniques; organic semiconductors; photoconductivity; photodetectors; photovoltaic effects; semiconductor heterojunctions; semiconductor thin films; solar cells; thin film devices; wide band gap semiconductors; GaN; hybrid device structure; nitride-organic hybrid heterostructures; optoelectronic device design; organic thin film semiconductors; photoconductivity gain; photodetector devices; photovoltaic effect; solar cell; Absorption; Gallium nitride; Gold; Heterojunctions; Lighting; Nanostructured materials; Organic materials; Photoconductivity; Photodetectors; Semiconductor materials; (230.0040) Detectors; (230.5160) Photodetectors;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571362