• DocumentCode
    2233896
  • Title

    Measurement of d15 shear-mode displacement in ferroelectric PZT film

  • Author

    Aoki, T. ; Umemiya, S. ; Kurihara, K.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    2009
  • fDate
    23-27 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    d15 shear-mode displacements in a ferroelectric PZT(52/48) film could be observed by using a FIB processing and SPM probe measurement for the first time ever. The PZT sample with a beam shape was fabricated by a combination of a sputtering deposition, a FIB machining, and a Cu damascene process. In order to compensate for the effect of constraints arisen from the beam sample structure, FEM simulation analyses were employed. The obtained d15 piezoelectric constant of the sputter PZT film was 590 pm/V. The d31 piezoelectric constant of the same PZT film was also measured by a conventional tip displacement of cantilever method. The obtained d31 value was -120 pm/V. Though the d15 value is as large as that of bulk shape, the d31 value was slightly smaller than that of bulk. The difference may be explained that an intrinsic stress existed in the lower portion of the PZT film.
  • Keywords
    cantilevers; copper; ferroelectric materials; ferroelectric thin films; finite element analysis; focused ion beam technology; lead compounds; machining; micromechanical devices; piezoelectric devices; piezoelectricity; scanning probe microscopy; sputter deposition; stress effects; Cu damascene process; FEM simulation; FIB machining; PZT-Cu; SPM probe measurement; beam sample structure; cantilever method; d15 shear-mode displacement; ferroelectric film; intrinsic stress; piezoelectric MEMS devices; piezoelectric constant; sputtering deposition; Analytical models; Displacement measurement; Ferroelectric films; Ferroelectric materials; Machining; Piezoelectric films; Scanning probe microscopy; Sputtering; Stress; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
  • Conference_Location
    Xian
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-4970-5
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2009.5307572
  • Filename
    5307572