Title :
Preparation and charaterization of high (100) oriented PSTT5 thin flims by RF sputtering technology
Author :
Li, Xuedong ; Chen, Qiang ; Sun, Yucheng ; Zhou, Yuanyuan ; Zhu, Jiliang ; Xiao, Dingquan ; Zhu, Jianguo
Author_Institution :
Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China
Abstract :
0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5) thin films were prepared on LaNiO3(LNO)/SiO2/Si substrate by RF sputtering technology. After sputtering, the PSTT5 thin films were annealed by normal one-step rapid thermal annealing (OSRTA) or a renovation of two-step rapid thermal annealing (TSRTA). The PSTT5 films annealed by TSA show high (100) orientation, high phase purity, sufficient crystallization and enhanced ferroelectric properties. The TSRTA mechanism was also discussed.
Keywords :
crystallisation; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; lead compounds; rapid thermal annealing; relaxor ferroelectrics; sputter deposition; LaNiO3-SiO2-Si; LaNiO3-SiO2-Si substrate; Pb(Sc0.5Ta0.5)O3-PbTiO3; RF sputtering technology; Si; crystallization; enhanced ferroelectric property; ferroelectric hysteresis loops; high (100) oriented PSTT5 thin film preparation; one-step rapid thermal annealing; phase purity; remnant polarization; two-step rapid thermal annealing; Crystallization; Ferroelectric films; Ferroelectric materials; Powders; Radio frequency; Rapid thermal annealing; Semiconductor thin films; Sputtering; Substrates; Temperature; PSTT; ferroelectric; thin film;
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2009.5307577
