Title :
Statistical IC simulation based on independent wafer extracted process parameters and experimental designs
Author :
Davis, William F. ; Ida, Richard T.
Author_Institution :
Motorola, Tempe, AZ, USA
Abstract :
A statistical bipolar IC simulation methodology that employs functional Gummel-Poon model parameters controlled by an independent set of process parameters extracted at a wafer probe is discussed. Fractional factorial screening and Box-Behnken experimental designs are used with regression analysis to develop a response surface polynomial model for each IC parameter as a function of the process parameters. A Monte-Carlo algorithm operates on each polynomial model to define the mean and standard deviation of each IC parameter, minimizing CPU time. A comparison is made between the simulated and measured statistical DC parameters of an operational amplifier in order to assess quantitatively the effectiveness of this method. Close agreement is found
Keywords :
Monte Carlo methods; bipolar integrated circuits; bipolar transistors; digital simulation; semiconductor device models; Box-Behnken experimental designs; Monte-Carlo algorithm; factorial screening; functional Gummel-Poon model parameters; independent wafer extracted process parameters; mean; operational amplifier; regression analysis; response surface polynomial model; standard deviation; statistical bipolar IC simulation methodology; wafer probe; Analog integrated circuits; Bipolar integrated circuits; Circuit simulation; Design for experiments; Integrated circuit modeling; Polynomials; Process control; Response surface methodology; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69505
