DocumentCode
2234272
Title
Analysis of on-chip spiral inductors using the distributed capacitance model
Author
Chia-Hsin Wu ; Tang, Chih-Chun ; Liu, Shem-Iuan
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2002
fDate
2002
Firstpage
259
Lastpage
262
Abstract
The characteristics of on-chip inductors such as the S parameter, the quality factor (Q), and the self-resonant frequency (fSR) can be determined by its series inductance, equivalent capacitance, and series resistance. In this paper, the distributed capacitance models have been developed to predict the equivalent capacitances of the on-chip spiral inductors such as planar and stacked inductor. Based on the equivalent capacitances formulas, a simple accurate methodology is proposed to build a compact model to predict the behaviors of on-chip inductors. A large amount of inductors have been implemented in 0.25-μm and 0.35-μm CMOS processes to demonstrate the prediction accuracy.
Keywords
CMOS integrated circuits; Q-factor; S-parameters; capacitance; inductors; integrated circuit measurement; radiofrequency integrated circuits; 0.25 micron; 0.35 micron; CMOS; S parameter; distributed capacitance model; equivalent capacitance; on-chip spiral inductors; planar inductor; quality factor; self-resonant frequency; series inductance; series resistance; stacked inductor; Capacitance; Frequency; Inductance; Inductors; Predictive models; Q factor; Scattering parameters; Semiconductor device modeling; Spirals; Strontium;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on
Print_ISBN
0-7803-7363-4
Type
conf
DOI
10.1109/APASIC.2002.1031581
Filename
1031581
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