• DocumentCode
    2234457
  • Title

    Effect of the sintering temperature on the properties of 0.96(K0.5Na0.5)(Nb0.96Sb0.04)-0.04LiTaO3 ceramics

  • Author

    Zhang, B. ; Xiao, D.Q. ; Wu, W.J. ; Li, J. ; Huang, X.L. ; Pei, Y. ; Wu, L. ; Zhu, J.G. ; He, Z.J.

  • Author_Institution
    Dept. of Mater. Sci., Sichuan Univ., Chengdu, China
  • fYear
    2009
  • fDate
    23-27 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Lead-free piezoelectric ceramics 0.96(K0.5Na0.5)(Nb0.96Sb0.04)-0.04LiTaO3 (96KNNS-4LT) have been prepared by using the conventional technique. The effect of the sintering temperature on the piezoelectric properties of 96KNNS-4LT ceramics was studied. The X-ray diffraction (XRD) and scanning electron microscope (SEM) show that all the ceramics possess a pure perovskite phase and dense microstructure. The ceramics sintered at 1090degC show better piezoelectric properties: d33=315.5 pC/N, kp=0.455, and TC=348degC, the optimized sintering temperature range is very narrow for KNN-based ceramics, and the optimized sintering temperature range in which the d33 and kp are in the range of 0.9 times the maximum one is less than 20degC. From the results obtained it was pointed out that the sintering temperature is a very critical factor for the K0.5Na0.5NbO3-based lead-free piezoelectric ceramics.
  • Keywords
    X-ray diffraction; lithium compounds; niobium compounds; piezoceramics; potassium compounds; scanning electron microscopy; sintering; sodium compounds; (K0.5Na0.5)(Nb0.96Sb0.04)-LiTaO3; 96KNNS-4LT ceramics; SEM; X-ray diffraction; XRD; critical factor; lead-free piezoelectric ceramics; material preparation; microstructure; scanning electron microscope; sintering temperature; temperature 1090 C; Decision support systems; Temperature; Virtual reality; Ferroelectric properties; K0.5Na0.5NbO3; Lead-free piezoelectric ceramics; Piezoelectric properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
  • Conference_Location
    Xian
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-4970-5
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2009.5307593
  • Filename
    5307593