DocumentCode :
2234791
Title :
Dielectric and electrical studies of SrBi2Nb1.9V0.1O9 ferroelectric ceramics
Author :
Jain, Sameer ; Devi, Sheela ; Jha, A.K.
Author_Institution :
Dept. of Appl. Phys., Delhi Coll. of Eng., Delhi, India
fYear :
2009
fDate :
23-27 Aug. 2009
Firstpage :
1
Lastpage :
5
Abstract :
In the present work, effect of sintering temperature on structural, dielectric and electrical properties of vanadium substituted strontium bismuth niobate ferroelectric ceramics have been studied. Samples of composition SrBi2Nb1.9V0.1O9 were synthesized by solid-state reaction method at different sintering temperatures. X-ray diffraction analysis reveals the formation of perovskite structure. Peak dielectric constant is found to increase with increasing sintering temperature while Curie temperature is observed to be the highest in the sample sintered at 900degC and it decreases in the sample sintered at 1000degC. Impedance analysis of the samples was carried out to study the grain and the grain boundary effects. Cole-cole plots reveal a decrease in bulk resistance on increasing temperature indicating NTCR behavior.
Keywords :
X-ray diffraction; crystal structure; dielectric losses; ferroelectric Curie temperature; ferroelectric ceramics; grain boundaries; permittivity; sintering; Curie temperature; SrBi2Nb1.9V0.1O9; X-ray diffraction analysis; cole-cole plots; dielectric constant; dielectric loss; dielectric properties; electrical properties; grain boundary effects; impedance analysis; perovskite structure; sintering temperature; solid-state reaction method; structural properties; temperature 1000 C; temperature 900 C; vanadium substituted strontium bismuth niobate ferroelectric ceramics; Bismuth; Ceramics; Dielectric constant; Ferroelectric materials; Impedance; Niobium compounds; Solid state circuits; Strontium; Temperature; X-ray diffraction; Curie temperature; Dielectric; Dielectric constant; Ferroelectrics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2009. ISAF 2009. 18th IEEE International Symposium on the
Conference_Location :
Xian
ISSN :
1099-4734
Print_ISBN :
978-1-4244-4970-5
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2009.5307608
Filename :
5307608
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2234791
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