Title :
Two-section InAs/InP quantum-dash passively mode locked lasers
Author :
Rosales, R. ; Merghem, K. ; Martinez, A. ; Accard, A. ; Lelarge, F. ; Ramdane, A.
Author_Institution :
Lab. for Photonics & Nanostruct., CNRS, Marcoussis, France
Abstract :
First observations of 2-section InAs/InP quantum-dash passive mode locking at 48 GHz are presented. Mode locking trends are compared to those of a 1 -section device and to the ones reported for InAs/GaAs quantum-dot lasers.
Keywords :
III-V semiconductors; indium compounds; laser mode locking; quantum dash lasers; InAs-InP; two-section quantum-dash passively mode locked lasers; Gallium arsenide; Indium phosphide; Laser mode locking; Optical device fabrication; Optical pulses; Quantum dot lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
