Title :
CW lasing of current injection blue GaN-based vertical cavity surface emitting lasers
Author :
Lu, Tien-Chang ; Kao, Tsung-Ting ; Chen, Shih-Wei ; Kao, Chih-Chiang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
Abstract :
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
Keywords :
III-V semiconductors; gallium compounds; semiconductor lasers; spectral line narrowing; surface emitting lasers; wide band gap semiconductors; CW lasing; GaN; VCSEL; blue GaN-based vertical cavity surface emitting lasers; current 1.4 mA; current injection; temperature 77 K; threshold current; wavelength 462 nm; Distributed Bragg reflectors; Gallium nitride; Laser modes; Microcavities; Optical pumping; Optical superlattices; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.5960) Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
