DocumentCode
2236146
Title
CW lasing of current injection blue GaN-based vertical cavity surface emitting lasers
Author
Lu, Tien-Chang ; Kao, Tsung-Ting ; Chen, Shih-Wei ; Kao, Chih-Chiang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
Keywords
III-V semiconductors; gallium compounds; semiconductor lasers; spectral line narrowing; surface emitting lasers; wide band gap semiconductors; CW lasing; GaN; VCSEL; blue GaN-based vertical cavity surface emitting lasers; current 1.4 mA; current injection; temperature 77 K; threshold current; wavelength 462 nm; Distributed Bragg reflectors; Gallium nitride; Laser modes; Microcavities; Optical pumping; Optical superlattices; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.5960) Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571452
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