• DocumentCode
    2236400
  • Title

    Optical static random access memory cell using an integrated semiconductor ring laser

  • Author

    Li, B. ; Memon, M.I. ; Mezosi, G. ; Wang, Z. ; Sorel, M. ; Yu, S.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
  • fYear
    2009
  • fDate
    15-19 Sept. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An optical static random access memory cell is experimentally demonstrated using a semiconductor ring laser set-reset flip-flop integrated with four SOAs at each output. Read and write operations at 1 Gb/s are achieved.
  • Keywords
    optical storage; random-access storage; ring lasers; semiconductor lasers; semiconductor optical amplifiers; SOA; integrated semiconductor ring laser; optical static random access memory cell; set-reset flip-flop; Decision support systems; Integrated optics; Quadratic programming; Ring lasers; SRAM chips; Semiconductor lasers; SRAM; SRL; read and write;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics in Switching, 2009. PS '09. International Conference on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-3857-0
  • Electronic_ISBN
    978-1-4244-3856-3
  • Type

    conf

  • DOI
    10.1109/PS.2009.5307766
  • Filename
    5307766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2236400