Title :
Temperature Characteristics of Threshold Voltage in Single Material Double Workfunction Gate(SMDWG) MOSFET
Author :
Liu Xin ; Dai Yuehua ; Chen Junning ; Li Junsheng
Author_Institution :
Electron. Sci. & Technol. Dept., Anhui Universityline, Hefei, China
Abstract :
The effects of temperature on threshold voltage are studied in Single Material Double Workfunction Gate (SMDWG) MOSFET, and an analytical temperature model of threshold voltage is presented. Comparisons are carried out between the model calculated results and the MEDICI simulation results at wide temperature range from 200K to 500 K. The good agreements validate the new model.
Keywords :
MOSFET; semiconductor device models; work function; MEDICI simulation; MOSFET; single material double work function gate; temperature 200 K to 500 K; temperature characteristics; threshold voltage; CMOS technology; Information science; Inorganic materials; MOSFET circuits; Poisson equations; Power engineering and energy; Silicon; Substrates; Temperature; Threshold voltage;
Conference_Titel :
Information Science and Engineering (ICISE), 2009 1st International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-4909-5
DOI :
10.1109/ICISE.2009.1159
