All-optical memories based on photonic crystal nanocavities

Author

Shinya, A. ; Matsuo, S. ; Nozaki, K. ; Tanabe, T. ; Kuramochi, E. ; Sato, T. ; Kakitsuka, T. ; Notomi, M.

Author_Institution

NTT Basic Res. Labs., Atsugi, Japan

fYear

2009

fDate

15-19 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 muW and the operating energy required for switching is only 30 fJ.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nanophotonics; optical bistability; optical modulation; optical storage; optical switches; photonic crystals; random-access storage; refractive index; InGaAsP; all-optical RAM system; all-optical bistable memory; carrier-induced nonlinearity; energy 30 fJ; photonic crystal nanocavities; power 40 muW; refractive index modulation; switching; Optical bistability; Optical buffering; Optical devices; Optical distortion; Optical filters; Optical packet switching; Optical refraction; Optical resonators; Optical variables control; Photonic crystals; InGaAsP; nanocavity; optical bit memory; photonic crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics in Switching, 2009. PS '09. International Conference on

Conference_Location

Pisa

Print_ISBN

978-1-4244-3857-0

Electronic_ISBN

978-1-4244-3856-3

Type

conf

DOI

10.1109/PS.2009.5307771

Filename

5307771