• DocumentCode
    2236556
  • Title

    Acceleration Factors for THB Induced Degradation of AlGaAs/InGaAs pHEMT Devices

  • Author

    Marchut, Leslie ; Whitman, Charles S.

  • Author_Institution
    RFMD, Greensboro
  • fYear
    2007
  • fDate
    14-14 Oct. 2007
  • Firstpage
    31
  • Lastpage
    40
  • Abstract
    PHEMT devices initially showing high failure rates during temperature humidity bias (THB) reliability testing were investigated further using a number of temperature and humidity conditions. Temperature was varied from 85 oC to 110 oC, humidity from 65% RH to 85% RH. Failure rates were fit to a Peck acceleration model using the method of maximum likelihood.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; maximum likelihood estimation; AlGaAs-InGaAs - Interface; Peck acceleration model; maximum likelihood method; pHEMT devices; temperature 85 degC to 110 degC; temperature humidity bias reliability testing; Acceleration; Degradation; Humidity; Indium gallium arsenide; Life estimation; PHEMTs; Qualifications; Stress; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ROCS Workshop, 2007.[Reliability of Compound Semiconductors Digest]
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-0-7908-0115-5
  • Type

    conf

  • DOI
    10.1109/ROCS.2007.4391058
  • Filename
    4391058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2236556