Title :
Acceleration Factors for THB Induced Degradation of AlGaAs/InGaAs pHEMT Devices
Author :
Marchut, Leslie ; Whitman, Charles S.
Author_Institution :
RFMD, Greensboro
Abstract :
PHEMT devices initially showing high failure rates during temperature humidity bias (THB) reliability testing were investigated further using a number of temperature and humidity conditions. Temperature was varied from 85 oC to 110 oC, humidity from 65% RH to 85% RH. Failure rates were fit to a Peck acceleration model using the method of maximum likelihood.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; maximum likelihood estimation; AlGaAs-InGaAs - Interface; Peck acceleration model; maximum likelihood method; pHEMT devices; temperature 85 degC to 110 degC; temperature humidity bias reliability testing; Acceleration; Degradation; Humidity; Indium gallium arsenide; Life estimation; PHEMTs; Qualifications; Stress; Temperature; Testing;
Conference_Titel :
ROCS Workshop, 2007.[Reliability of Compound Semiconductors Digest]
Conference_Location :
Portland, OR
Print_ISBN :
978-0-7908-0115-5
DOI :
10.1109/ROCS.2007.4391058
