Reliability Study of 0.15um MHEMT with Vds≫3V Bias for Amplifier Application

MHEMT technology using metamorphic buffer layers growing on GaAs substrate can overcome InP substrate issues. Several researchers have demonstrated reliable MHEMT devices, mainly with the drain bias at 1 V. This work, however, demonstrated for the first time MHEMT devices operated at drain voltage greater than 3 V for the amplifier application. We have demonstrated the power MHEMT at 3.5V drain bias with Ea of 1.53eV and MTTF of 2.32x10⁶ hours at Teh of 125degC on WIN Semiconductors´1 technology. We also found that stressed voltage bias plays a more important role than the current density in short-term reliability evaluation.