Title :
Fabrication of photonic crystal light-emitting diode with photoelectrochemical wet etching and phase mask interference
Author :
Chen, Cheng-Yen ; Lin, Cheng-Hung ; Yeh, Dong-Ming ; Lu, Chih-Feng ; Huang, Chi-Feng ; Yang, C.C.
Author_Institution :
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
Abstract :
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.
Keywords :
III-V semiconductors; etching; gallium compounds; indium compounds; integrated optics; light emitting diodes; photoelectrochemistry; photonic crystals; quantum well devices; wide band gap semiconductors; InGaN-GaN; LED fabrication; light-extraction efficiency; phase mask interference; photoelectrochemical wet etching; photonic crystal light-emitting diode; photonic crystal structure; quantum-well light-emitting diode; Fabrication; Gratings; Interference; Light emitting diodes; Optical scattering; Optical surface waves; Photonic crystals; Quantum well devices; Rough surfaces; Wet etching; 230.3670 Light-emitting diodes; 230.5590 Quantum-well devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9