Size effects and light extraction efficiency optimization of III-Nitride light emitting diodes with SiO2 / polystyrene microlens arrays

Author

Ee, Yik-Khoon ; Kumnorkaew, Pisist ; Arif, Ronald A. ; Tong, Hua ; Gilchrist, James F. ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Optimization studies of InGaN quantum wells light emitting diodes employing SiO₂/polystyrene microlens arrays are conducted. The use of microlens arrays leads to increase in light extraction efficiency by 2.7-times, in agreement with simulation.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; microlenses; optimisation; semiconductor quantum wells; silicon compounds; wide band gap semiconductors; III-nitride light emitting diodes; InGaN; SiO₂; light extraction; optimization; polystyrene microlens arrays; semiconductor quantum wells; size effects; Computational modeling; Lenses; Light emitting diodes; Microoptics; Optical arrays; Optical refraction; Optical variables control; Ray tracing; Spontaneous emission; Stimulated emission; (230.0250) Optoelectronics; (230.3670) Light-Emitting Diodes;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571487