Title :
Reduction of shorts between polysilicon word lines on a 4 Meg DRAM product
Author :
Todoroff, John A.
Author_Institution :
MiCRUS, Hopewell Junction, NY, USA
Abstract :
A significant reduction in defects in a polysilicon level was achieved by a team of process and diagnostic engineers. This paper will describe the methodology. Electrical measurements on a defect test site were used together with surface particle counter data and automated optical inspection to understand the problems and determine the success of various actions. Improvements were made at the oxidation, polysilicon deposition, anneal, photolithography, and RIE operations
Keywords :
DRAM chips; automatic optical inspection; elemental semiconductors; integrated circuit measurement; particle counting; silicon; 4 Mbit; DRAM; RIE; Si; annealing; automated optical inspection; defect testing; electrical measurement; film deposition; oxidation; photolithography; polysilicon word line; short; surface particle counting; Automatic optical inspection; Automatic testing; Counting circuits; Electric variables measurement; Monitoring; Optical microscopy; Particle measurements; Random access memory; Scanning electron microscopy; Surface emitting lasers;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-3371-3
DOI :
10.1109/ASMC.1996.558020
