DocumentCode :
2237120
Title :
Stabilization of resistive switching with controllable self-compliant Ta2O5-based RRAM
Author :
Chen, W.S. ; Wu, T.Y. ; Yang, S.Y. ; Liu, W.H. ; Lee, H.Y. ; Chen, Y.S. ; Tsai, C.H. ; Gu, P.Y. ; Tsai, K.H. ; Chen, Patrick S. ; Wei, H.W. ; Chen, Patrick S. ; Wang, Y.H. ; Chen, F.T. ; Tsai, Mavis
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
1
Lastpage :
2
Abstract :
Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
Keywords :
random-access storage; tantalum; tantalum compounds; RRAM; SC conduction layer; Ta-Ta2O5; current compliance; resistive switching; self-compliant characteristics; stabilization; Alloying; Electric variables; Electrodes; Materials; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1930-8868
Print_ISBN :
978-1-4577-2083-3
Type :
conf
DOI :
10.1109/VLSI-TSA.2012.6210099
Filename :
6210099
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2237120
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