Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling

Author

Degraeve, R. ; Goux, L. ; Clima, S. ; Govoreanu, B. ; Chen, Y.Y. ; Kar, G.S. ; Rousse, P. ; Pourtois, G. ; Wouters, D.J. ; Altimime, L. ; Jurczak, M. ; Groeseneken, G. ; Kittl, J.A.

Author_Institution

ESAT Dept., imec, Leuven, Belgium

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

2

Abstract

Forming current I_form is a crucial parameter for stable cycling in a HfO₂ RRAM stack. (i) Too low I_form results in constriction `elongation´ for filament current reduction during reset, quickly leading to failure. (ii) Too high and unlimited I_form leads to poor control of the filament nature expressed as a wide V₀-distribution in the QPC model. (iii) In between, I_form is directly correlated to the minimal achievable HRS current and a narrow, stable filament is formed which allows for device scaling as well as multi-level programming.

Keywords

failure analysis; hafnium compounds; random-access storage; scaling circuits; HRS current; HfO₂; RRAM metal oxide stacks; device scaling; failure; filament current reduction; filament properties tuning; multilevel programming; optimized stable cycling; Current measurement; Dielectrics; Energy states; Hafnium compounds; Tin; Transistors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

1930-8868

Print_ISBN

978-1-4577-2083-3

Type

conf

DOI

10.1109/VLSI-TSA.2012.6210101

Filename

6210101