808-nm TM polarised high power broad area Lasers with 69.5% power conversion efficiency at 71-W

Author

Crump, P. ; Wenzel, H. ; Erbert, G. ; Einfeldt, S. ; Ressel, P. ; Zorn, M. ; Bugge, F. ; Spreemann, M. ; Dittmar, F. ; Staske, R. ; Trankle, G.

Author_Institution

Forschungsverbund Berlin e.V., Ferdinand-Braun-Inst. fur Hoechstfrequenztechnik, Berlin

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We report TM polarized 808-nm lasers bars with 69.5% efficiency at 15degC. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity to packaging induced stress.low-strained quantum well,packaging induced stress.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; packaging; quantum well lasers; InGaAsP; broad area lasers; high power lasers; power 71 W; power conversion efficiency; temperature 15 degC; transverse magnetic polarisation; wavelength 808 nm; Bars; Diode lasers; Optical materials; Packaging; Polarization; Power conversion; Power lasers; Quantum well lasers; Semiconductor laser arrays; Waveguide lasers; (140.2010) Diode Laser Arrays; (140.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571503