• DocumentCode
    2237439
  • Title

    Z2-FET: A zero-slope switching device with gate-controlled hysteresis

  • Author

    Wan, J. ; Royer, C. Le ; Zaslavsky, A. ; Cristoloveanu, S.

  • Author_Institution
    IMEP-LAHC, INP-Grenoble, Grenoble, France
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present a novel switching device named Z2-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <; 1 mV/dec and an ION/IOFF current ratio >; 1010. The device further shows large hysteresis in drain current-drain voltage (ID-VD) domain with the turn-on voltage (VON) linearly controlled by gate voltage (VG). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.
  • Keywords
    field effect transistors; hysteresis; impact ionisation; silicon-on-insulator; FD-SOI technology; Si; Z2-FET; carrier flow; current ratio; drain current-drain voltage domain; fully-depleted silicon-on-insulator technology; gate voltage; gate-controlled hysteresis; injection barrier; positive feedback; subthreshold slope; turn-on voltage; zero-impact ionization; zero-slope switching device; zero-subthreshold swing; Dielectrics; Electron traps; Hafnium compounds; Logic gates; MOSFET circuits; Stress; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210113
  • Filename
    6210113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237439