Title :
PBTI characteristics of N-channel tunneling field effect transistor with HfO2 gate dielectric: New insights and physical model
Author :
Han, Genquan ; Yang, Yue ; Guo, Pengfei ; Zhan, Chunlei ; Low, Kain Lu ; Goh, Kian Hui ; Liu, Bin ; Toh, Eng-Huat ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔVTH and Gm loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET.
Keywords :
MOSFET; electron traps; high-k dielectric thin films; tunnelling; HfO2; N-channel tunneling field effect transistor; PBTI characteristics; bias temperature instability; gate dielectric; high-k-metal gate stack; nMOSFET; nTFET; trapped electrons; tunnel junction; Dielectrics; Electron traps; Hafnium compounds; Logic gates; MOSFET circuits; Stress; Stress measurement;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210114
