Title :
A high efficient and compact charge pump with multi-pillar vertical MOSFET
Author :
Na, Hyoungjun ; Endoh, Tetsuo
Author_Institution :
Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
Abstract :
A new charge pump with the multi-pillar VMOS has been proposed and its performances for different ratio of the pillar diameter and the pillar space in the multi-pillar have been evaluated. As the results, it is clarified that the proposed charge pump realizes the best performances when the ratio is 1. The proposed charge pump realizes a 24% increased output current with 2.88% improved efficiency and a 0.7V higher VPP with 19% shorter VPP generation time than the conventional charge pump with the single-pillar VMOS.
Keywords :
MOS integrated circuits; MOSFET; charge pump circuits; VPP generation time; compact charge pump; multipillar VMOS; multipillar vertical MOSFET; pillar diameter; pillar space; voltage 0.7 V; Charge pumps; Load modeling; Logic gates; MOSFET circuits; Memory management; Transistors; Voltage control;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210118
