DocumentCode
2237571
Title
AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process
Author
Liu, Xinke ; Zhan, Chunlei ; Chan, Kwok Wai ; Liu, Wei ; Tan, Leng Seow ; Teo, Kie Leong ; Chen, Kevin Jing ; Yeo, Yee-Chia
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
2
Abstract
AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. Ron of 3 mΩ.cm2 was obtained. Breakdown voltage VBR of 800 V was achieved, the highest for LGD below 10 μm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts.
Keywords
CMOS integrated circuits; MIS devices; electric breakdown; high electron mobility transistors; AlGaN-GaN; AlGaN/GaN-on-silicon MOS-HEMT; CMOS-compatible gold-free process; breakdown voltage; etching modules; gate stack formation; on-state resistance; power switching circuits; voltage 800 V; Aluminum gallium nitride; Aluminum oxide; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
1930-8868
Print_ISBN
978-1-4577-2083-3
Type
conf
DOI
10.1109/VLSI-TSA.2012.6210119
Filename
6210119
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